 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDW256P May 2001 FDW256P 30V P-Channel PowerTrench(R) MOSFET General Description This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V). Features * -8 A, -30 V RDS(ON) = 13.5 m @ V GS = -10 V RDS(ON) = 20 m @ V GS = -4.5 V * Extended V GSS range (25V) for battery applications * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package Applications * Battery protection * DC/DC conversion * Power management * Load switch D S S D G S S D 5 6 7 8 4 3 2 1 TSSOP-8 Pin 1 Absolute Maximum Ratings Symbol V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous TA=25oC unless otherwise noted Parameter Ratings -30 25 (Note 1) Units V V A W C -8 -50 1.3 0.6 -55 to +150 - Pulsed Power Dissipation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 96 208 C/W Package Marking and Ordering Information Device Marking 256P Device FDW256P Reel Size 13'' Tape width 16mm Quantity 3000 units (c)2001 Fairc hild Semiconductor Corporation FDW256P Rev C(W) FDW256P Electrical Characteristics Symbol BV DSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions V GS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C V DS = -24 V, V GS = 0 V V GS = 25 V, V DS = 0 V V GS = -25 V, V DS = 0 V V DS = V GS , ID = -250 A ID = -250 A, Referenced to 25C V GS = -10 V, ID = -8.0 A V GS = -4.5 V, ID = -6.5 A V GS =-10 V, ID =-8.0A, TJ =125C V GS = -10 V, V DS = -5 V, V DS = -5 V ID = -8.0 A Min -30 Typ Max Units V Off Characteristics -23 -1 100 -100 mV/C A nA nA On Characteristics V GS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance -1 -1.7 5 11 16 15 -3 V mV/C 13.5 20 19 m ID(on) gFS -50 30 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) V DS = -15 V, f = 1.0 MHz V GS = 0 V, 2267 599 315 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = -15 V, V GS = -10 V, ID = -1 A, RGEN = 6 15 11 78 45 27 35 125 72 38 ns ns ns ns nC nC nC V DS = -15 V, V GS = -5.0V ID = -8.0 A, 28 7 12 Drain-Source Diode Characteristics and Maximum Ratings IS V SD Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA is 96 C/W (steady state) when mounted on a 1 inch copper pad on FR-4. b) RJA is 208 C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = -1.2 A Voltage -1.2 (Note 2) A V -0.7 -1.2 FDW256P Rev C(W) FDW256P Typical Characteristics 50 VGS = -10V -6.0V 40 -I D, DRAIN CURRENT (A) -4.5V -4.0V 2.2 -3.5V RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 -I D, DRAIN CURRENT (A) -4.0V -4.5V -5.0V -6.0V -10V VGS = -3.5V 30 20 -3.0V 10 0 0 0.5 1 1.5 2 2.5 3 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.05 RDS(ON) ON-RESISTANCE (OHM) , 1.6 RDS(ON) NORMALIZED , DRAIN-SOURCE ON-RESISTANCE ID = -8A V GS = -10V 1.4 ID = -4.0A 0.04 1.2 0.03 TA = 125o C 0.02 T A = 25o C 0.01 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 50 -I S, REVERSE DRAIN CURRENT (A) V DS = -5.0V 40 -ID, DRAIN CURRENT (A) 125o C 30 T A = -55o C 25oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 V GS = 0V 10 T A = 125o C 1 25o C 0.1 -55 oC 0.01 20 10 0.001 0 1 1.5 2 2.5 3 3.5 4 -V GS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW256P Rev C(W) FDW256P Typical Characteristics 10 -V GS, GATE-SOURCE VOLTAGE (V) ID = -8A 8 -20V CAPACITANCE (pF) 6 V DS = -10V -15V 4000 f = 1 MHz V GS = 0 V 3200 CISS 2400 4 1600 COSS 800 CRSS 2 0 0 10 20 30 40 50 Q g, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 1ms RDS(ON) LIMIT 10ms 100ms 1s 1 V GS = -10V SINGLE PULSE R JA = 208o C/W T A = 25o C 0.01 0.01 DC 10s 50 Figure 8. Capacitance Characteristics. 40 -ID, DRAIN CURRENT (A) 10 SINGLE PULSE RJA = 208C/W TA = 25C 30 20 0.1 10 0.1 1 10 100 0 0.01 0.1 1 t 1, TIME (sec) 10 100 -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 RJA(t) = r(t) + RJA o RJA = 208 C/W P(pk) 0.02 0.01 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW256P Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2 |
Price & Availability of FDW256P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |